We　presented　the　experimental　and　theoretical　investigations　of　the　surface　plasmon-exciton　coupled　photoluminescence　characteristics　of　Ga-doped　Zinc　Oxide　(GZO)　in　Ag/GZO　and　Au/GZO　nanostructures.　An　eightfold　enhancement　of　the　near-band-edge　(NBE)　emission　with　suppression　of　deep　levels　has　been　achieved　without　insertion　of　a　dielectric　spacer.　The　suppression　of　deep　level　emission　makes　these　nanostructures　useful　for　visible　blind　photodetectors.　The　experimental　room　temperature　photoluminescence　consequences　pointed　that　the　plasmon-exciton　coupling　contributed　to　the　enhancement　of　the　radiative　recombination　rate　at　the　NBE　in　the　metal-semiconductor　architecture.