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La2/3Sr1/3MnO3 films with highly (110) preferred orientation were deposited on Si (100) substrate without any buffer layer by using a pulsed laser deposition technique. The effects of oxygen pressure on crystallinity, preferred orientation, surface morphology, magnetic and electrical transport properties of the films were investigated. The results show that, comparing to the films deposited at other ambient oxygen pressure, La2/3Sr1/3MnO3 films deposited at 10 Pa presented highly (110) preferred orientation with highly crystalline quality and have more homogeneous grain size distribution as well as dense microstructure. Meanwhile, the roughness of the films also shows the smallest root mean square value (Rrms) of 1.35 nm. The film with the (110) preferred orientation shows higher saturated magnetization (Ms), higher metal-insulator transition temperature (TM-I) and lower resistivity (ρ) than that without preferred orientation one.
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