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作者:

Shen, Pei (Shen, Pei.) | Zhang, Wanrong (Zhang, Wanrong.) | Huang, Lu (Huang, Lu.) | Jin, Dongyue (Jin, Dongyue.) | Xie, Hongyun (Xie, Hongyun.)

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摘要:

An improved inductor layout with non-uniform metal width and non-uniform spacing is proposed to increase the quality factor (Q factor). For this inductor layout, from outer coil to inner coil, the metal width is reduced by an arithmetic-progression step, while the metal spacing is increased by a geometric-progression step. An improved layout with variable width and changed spacing is of benefit to the Q factor of RF spiral inductor improvement (approximately 42.86%), mainly due to the suppression of eddy-current loss by weakening the current crowding effect in the center of the spiral inductor. In order to increase the Q factor further, for the novel inductor, a patterned ground shield is used with optimized layout together. The results indicate that, in the range of 0.5 to 16 GHz, the Q factor of the novel inductor is at an optimum, which improves by 67% more than conventional inductors with uniform geometry dimensions (equal width and equal spacing), is enhanced by nearly 23% more than a PGS inductor with uniform geometry dimensions, and improves by almost 20% more than an inductor with an improved layout. © 2011 Chinese Institute of Electronics.

关键词:

Electric inductors Geometry Metals Optimization Q factor measurement

作者机构:

  • [ 1 ] [Shen, Pei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
  • [ 2 ] [Shen, Pei]Alabama Microelectronics Science and Technology Center, Electronic and Computer Engineering Department, Auburn University, Auburn, AL 36849, United States
  • [ 3 ] [Zhang, Wanrong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
  • [ 4 ] [Huang, Lu]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
  • [ 5 ] [Jin, Dongyue]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
  • [ 6 ] [Xie, Hongyun]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China

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来源 :

Journal of Semiconductors

ISSN: 1674-4926

年份: 2011

期: 6

卷: 32

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 18

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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