Indium　tin　oxide(ITO)　film　is　fabricated　with　vacuum　electron-beam　evaporation.　A　novel　AlGaInP　light-emitting　diode　(LED)　with　a　300　nm　thickness　transparent　conducting　indium　tin　oxide　film　as　window　layer　is　fabricated.　LED　chip　was　annealed　rapidly　in　N2　atmosphere　for　40　s　.　As　the　rapid　thermal　annealing　(RTA)　temperature　increases,　the　luminous　intensity　increases　at　the　beginning　and　then　decreases　while　the　voltage　first　decreases　and　then　increases.　And　the　optimal　annealing　temperature　for　the　luminous　intensity　and　voltage　is　435°C.　The　result　from　Hall　test　of　ITO　film　showed　that　the　carrier　concentration　is　the　highest　and　the　resistivity　is　the　lowest　when　ITO　is　annealed　in　a　RTA　system　at　435°C.　The　forward　voltage　of　LED　decreases　due　to　the　resistance　of　ITO　and　the　Ohmic　contact　resistance　decreased　and　the　light　output　increases　due　to　the　better　current-spreading　effect　of　ITO　as　current-spreading　layer.