Effect of top distributed Bragg reflectors on the performance of 650 nm AlGaInP resonant cavity light-emitting diodes - 文章详情页

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摘要：

Three　kinds　of　650　nm　AlGaInP　resonant　cavity　light-emitting　diodes　(RCLEDs)　are　fabricated　by　metal　organic　chemical　vapor　deposition　(MOCVD)　with　different　numbers　of　pairs　of　top　distributed　Bragg　reflectors　(DBRs),　which　are　15,　10　and　5,　respectively.　By　comparing　the　full　width　at　half　maximum　(FWHM),　light　power　and　the　angular　far-field　emission　of　the　devices,　the　device　with　15　pairs　of　top　DBRs　shows　the　best　performance.　Its　FWHM　is　13.4　nm　and　the　light　power　is　0.63　mW　at　a　driving　current　of　30　mA.　©　2010　Tianjin　University　of　Technology　and　Springer-Verlag　Berlin　Heidelberg.

关键词：

Cavity resonators Distributed Bragg reflectors Field emission Full width at half maximum Light emission Light emitting diodes Metallorganic chemical vapor deposition Organic chemicals Organic light emitting diodes (OLED) Organometallics Reflection

作者机构：

[ 1 ] [Yang, Zhen]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Li, Jian-jun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Kang, Yu-zhu]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Zou, De-shu]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Shen, Guang-di]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

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