A　series　of　CuCr1-xMgxO2　(0≤x≤0.09)　thin　films　were　deposited　on　quartz　substrates　using　radio　frequency　magnetron　sputtering.　The　structures,　optical　and　electrical　properties　of　CuCr0.91Mg0.09O2　thin　films　were　investigated　by　diffractometry,　double-beam　spectrophotometry,　electrical　property　measurement,　respectively.　XRD　pattern　indicates　that　all　films　are　of　3R　polycrystalline　delafossite　phase　with　good　crystallinity　after　annealing.　The　conductivity　of　film　has　a　notable　improvement　with　increasing　Mg.　The　conductivity　at　room　temperature　is　6.16×10-2　S/cm　for　x=0.09　which　is　nearly　400　times　higher　than　that　undoped　CuCrO2　film.　The　p-type　nature　of　films　is　confirmed　by　Hall　measurements.　The　temperature　dependence　of　electrical　conductivity　agrees　well　with　the　Arrhenius　rule　in　the　range　of　200-300　K　for　all　samples,　and　the　minimum　activation　energy　is　0.034　eV　with　x=0.09.　Both　average　transmittance　and　optical　band　gap　of　CuCr1-xMgxO2　films　decrease　with　the　increase　of　Mg　concentration.