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作者:

Jiang, Wenjing (Jiang, Wenjing.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Shen, Guangdi (Shen, Guangdi.) | Fang, Rong (Fang, Rong.) | Gao, Wei (Gao, Wei.)

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摘要:

This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes (LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma. Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs. The light-intensity of the nanorod LED is increased by 34% for a thin GaP window layer, and by 17% for an 8 μm GaP window layer. The light-power of the nanorod LED is increased by 25% and 13%, respectively. © 2010 Chinese Institute of Electronics.

关键词:

Electromagnetic induction Gallium alloys Inductively coupled plasma Light Light emitting diodes Metal recovery Nanorods Self assembly Silicon solar cells

作者机构:

  • [ 1 ] [Jiang, Wenjing]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Xu, Chen]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Fang, Rong]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Gao, Wei]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100124, China

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来源 :

Journal of Semiconductors

ISSN: 1674-4926

年份: 2010

期: 6

卷: 31

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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