Grain　structures　and　stress　states　were　observed　and　measured　by　using　the　x-ray　diffractometer　and　the　atomic　force　microscope　for　Cu　and　Al　interconnect　lines　fabricated　by　damascene　processing　and　reactive　ion　etching　processing,　respectively.　Due　to　the　influence　of　the　mechanical　stress　on　the　Cu　line　in　the　damascene　trench,　the　grain　size　of　Cu　lines　(45~65nm)　was　smaller　than　that　of　Al　lines　(200~300nm);　the　strength　of　(111)　texture　of　Cu　lines　(2.56)　become　weaker　than　that　of　Al　lines　(15.35);　and　the　stress　across　the　lines　σ22　increased　with　the　decrease　in　Cu　line　width,　i.e.,　for　deposited　and　annealed　Cu　lines,　σ22　increased　from　~　73　and　~　250MPa　(4μm-line　width)　to　~　104　and　301MPa　(0.5μm-line　width),　respectively.　The　hydrostatic　stress　σ　was　tensile　for　Cu　and　Al　lines.　Stresses,　σ11,　σ22　and　σ33　of　Al　lines　increased　with　decrease　in　Al　film　thickness.　Stresses,　σ11,　σ22　and　σ33　of　Al　lines　decreased　after　annealing,　indicated　that　thermal　stress　was　the　main　contributor　to　residual　stress　in　Al　lines.