By　comparing　the　basic　properties　of　the　new　materials,　the　doping　mechanism　and　design　principles　can　be　comprehended　more　clearly.　The　exploration　and　scientific　assessment　of　applied　fields　for　new　compounds　is　still　lacking.　Here,　a　new　material　(In2O3/Ga2O3)(0.1)(Co)(0.5)(ZnS/Se)(0.4)　ceramics　were　fabricated　via　the　solid-state　sintering,　and　the　thin　films　with　same　composition　were　obtained　by　PLD　method　at　25　degrees　C-2　Pa　and　800　degrees　C-12　Pa.　The　crystal　structure　in　ceramics　but　the　amorphous　structure　in　thin　films　was　confirmed　by　XRD.　The　physics　growth　mode　of　island　and　layer-plusisland　for　this　film　were　established.　The　morphology　of　the　film　was　characterized　by　AFM　and　SEM.　Chemical　valence　+3,　+2　and　+3,　+3　of　In,　Ga　and　Co,　respectively,　were　proved　by　XPS.　Ga-Co,　Ga/In-O　and　ZnS　Bonds　vibration　information　was　tested　by　Raman　spectra.　The　more　abundant　energy　level　and　smaller　optical　band　gap　in　(In2O3)(0.1)(Co)(0.5)(ZnS/Se)(0.4)　was　reflected　by　optical　properties.　The　better　electric　direction　application　potential　in　(Ga2O3)(0.1)(Co)(0.5)(ZnS/Se)(0.4)　was　confirmed　by　Hall　Effect　testing.　What＇s　important,　the　ability　to　alter　the　basic　properties　of　materials　according　to　our　requirement　by　changing　the　different　doping　elements　had　been　achieved.