收录:
摘要:
Automated high resolution electron backscatter diffraction was used to map the local crystallographic texture of Pt and PbZr1-x Ti x O3 (PZT) thin films with a resolution as high as 5 nm. The Pt and PZT films consisted of 99.9% and 94.3% {111} textured grains (i.e., with (111) planes parallel to the substrate surface), respectively. The average Pt and PZT grain sizes were 46 ± 30 nm and 65 ± 30 nm, respectively. Quantification of misorientation distributions and the fraction of non-{111}-textured grains demonstrates the potential of this local texture measurement method for quantifying the ferroelectric variability limits of PZT-based capacitors. © 2010 Springer Science+Business Media, LLC.
关键词:
通讯作者信息:
电子邮件地址:
来源 :
Journal of Materials Science
ISSN: 0022-2461
年份: 2010
期: 11
卷: 45
页码: 2991-2994
4 . 5 0 0
JCR@2022
ESI学科: MATERIALS SCIENCE;
JCR分区:2
中科院分区:3