A　buried-oxide　trench-gate　bipolar-mode　power　JFET　(BTB-JFET)　facing　to　low　voltage　and　high　frequency　switching　application　is　presented.　Power　loss　comparison　at　high　frequency　among　20V-rated　power　switching　devices,　including　BTB-JFET,　conventional　trench-gate　bipolar-mode　JFET　(TB-JFET)　and　trench-gate　MOSFET　(T-MOSFET),　is　carried　out　by　means　of　simulation　based　on　static　analysis　and　mixed-mode　analysis　using　an　inductive　switching　circuit　for　the　first　time.　Simulation　results　show　that　the　gate-drain　capacitance　CGD　of　normally-on　BTB-JFET　has　an　improvement　up　to　25%　than　that　of　TB-JFET　at　zero　source-drain　bias.　Normally-on　TB-JFET　has　at　least　14%　total　power　loss　improvement　at　1MHz　and　19%　at　2MHz　compared　to　that　of　the　T-MOSFET,　while　normally-on　BTB-JFET　can　provide　6%　more　improvement　at　1　and　2MHz　compared　to　that　of　the　TB-JFET.　Simulation　results　also　show　that　the　normally-off　JFET　always　perform　worse　than　the　T-MOSFET　at　different　frequencies.　The　measurement　results　of　samples　still　under　fabrication　show　that　the　CGD　of　normally-on　BTB-JFET　has　an　improvement　up　to　45%　than　that　of　TB-JFET　at　zero　source-drain　bias,　which　accords　with　simulation.