To　study　the　electrical　properties　of　single　nanowire　and　device　based　on　nanowire,　a　two-probe　configuration　setup　was　built　for　measuring　current-voltage　(I-V)　curves　of　individual　ZnO　nanowire　with　a　micromanipulator　system　in　a　scanning　electron　microscope.　The　I-V　curves　of　ZnO　nanowires,　i.e.,　almost　linear,　typical　rectifying,　almost　symmetric　and　asymmetric　were　obtained.　I-V　characteristics　are　explained　by　a　metal-semiconductor-metal　(M-S-M)　model　and　the　thermionic　emission　theory.　The　current　of　ZnO　nanowires　mainly　depends　on　the　degree　of　coupling　between　the　nanowire　and　two　contact　tungsten　electrodes.　The　calculation　results　of　electrical　properties　for　ZnO　nanowires　shows　that　the　resistance　of　almost　linear　curve　is　4.2　Ω·cm;　the　effective　Schottky　barrier　height　of　rectifying　I-V　characteristics　is　0.47　eV.