Recently,　investigation　on　InGaZnO　acting　as　channel　layer　for　thin　film　transistor　attracted　much　attention,　in　order　to　meet　the　demand　of　flexiable　display　devices.　Ga2O3,　In2O3,　ZnO　powders　were　mixed　up　according　to　a　certain　mol　ratio,　after　the　course　of　grinding,　presintering,　grinding,　pressing　and　sintering,　InGaZnO　ceramic　target　was　obtained　by　solid-state　reaction　in　atmospheric　pressure,　and　the　target　was　tested　by　X-ray　diffraction.　Moreover,　pulsed　laser　deposition　method　was　applied　to　grow　InGaZnO　films　at　certain　temperature,　using　quartz　glass　as　substrate.　The　film　was　carefully　examined　by　atomic　force　microscopy　(AFM),　transmittance　specturm　and　Hall-effect,　finally　got　semiconductor　thin　film　with　high　smoothness,　high　transmittance　in　visible　region　and　excellent　electrical　properties.　These　tasks　will　bring　with　experimental　results　in　fabrication　of　InGaZnO　thin　films　for　further　researches.