Thermal property of high power 980 nm InGaAs/InGaAsP/InGaP laser diodes - 文章详情页

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摘要：

An　aluminum-free　InGaAs/InGaAsP/InGaP　single　quantum　well　(SQW)　laser　diode　(LD)　is　grown　by　low-pressure　MOCVD.　The　P-I-V　characteristics　of　Al-free　and　Al-containing　980-nm　InGaAs　lasers　are　tested　in　temperature　range　of　30-70　°C.　The　variations　with　temperature　of　the　two　different　LDs＇　characteristic　parameters,　including　output　power,　threshold　current,　slope　efficiency,　and　the　wavelength,　are　analyzed　contrastively.　The　reliability　experiments　on　the　InGaAs/InGaAsP/InGaP　laser　diodes　are　also　carried　out.

关键词：

Diodes Gallium alloys Gallium compounds High power lasers Indium alloys Lasers Quantum well lasers Semiconducting indium Semiconducting indium gallium arsenide Semiconductor alloys Semiconductor quantum wells

作者机构：

[ 1 ] [Qiu, Liping]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Guo, Weiling]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Luo, Dan]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Cui, Bifeng]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Zhang, Lei]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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jxlqlp@emails.bjut.edu.cn

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