Reliability of AlGaInP light emitting diodes with an ITO current spreading layer - 文章详情页

作者：

Gao, Wei (Gao, Wei.) | Guo, Weiling (Guo, Weiling.) | Zhu, Yanxu (Zhu, Yanxu.) | Jiang, Wenjing (Jiang, Wenjing.) | Shen, Guangdi (Shen, Guangdi.)

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摘要：

Three　aging　experiments　were　performed　for　AlGaInP　light　emitting　diodes　(LED)　with　or　without　indium　tin　oxide　(ITO),　which　is　used　as　a　current　spreading　layer.　It　was　found　that　the　voltage　of　the　LED　with　an　ITO　film　increased　at　a　high　current　stressing,　while　there　was　little　change　for　that　of　the　LED　without　the　ITO.　The　results　of　the　LEDs　with　different　thicknesses　of　the　ITO　film　show　that　the　LED　with　a　thicker　ITO　has　a　higher　reliability.　The　main　reason　for　the　voltage　increase　of　the　LED　with　the　ITO　film　might　be　the　current　crowding　in　the　ITO　film　around　the　P-type　electrode.　©　2009　Chinese　Institute　of　Electronics.

关键词：

Diodes Indium ITO glass Light emission Light emitting diodes Photolithography Reliability Tin Titanium compounds

作者机构：

[ 1 ] [Gao, Wei]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Guo, Weiling]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhu, Yanxu]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Jiang, Wenjing]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Shen, Guangdi]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100124, China

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电子邮件地址：

gaowei@emails.bjut.edu.cn

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