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作者:

Wu, Yu (Wu, Yu.) | Wang, Hao (Wang, Hao.) | Cheng, Xu (Cheng, Xu.) | Kang, Bao-Wei (Kang, Bao-Wei.)

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摘要:

Based on a 400 V power bipolar integrated device (BJT and a anti-parallel p-i-n diode integrated on the same chip) and through simulation and experimental test, some fundamental concepts and physical images were established concerning the influence of the parasitic lateral p-n-p transistor on the integrated device and the dependence of this influence on the distance between the main transistor and the internal diode. Finally, the optimized design of the above-mentioned distance was proposed. These provide a theoretical basis for understanding the issue and devising new methods to isolate the main transistor and the internal diode.

关键词:

Bipolar integrated circuits Bipolar transistors Diodes Leakage currents

作者机构:

  • [ 1 ] [Wu, Yu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Wang, Hao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Cheng, Xu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Kang, Bao-Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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来源 :

Journal of Beijing University of Technology

ISSN: 0254-0037

年份: 2009

期: 9

卷: 35

页码: 1168-1174

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WoS核心集被引频次: 0

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