收录:
摘要:
Based on a 400 V power bipolar integrated device (BJT and a anti-parallel p-i-n diode integrated on the same chip) and through simulation and experimental test, some fundamental concepts and physical images were established concerning the influence of the parasitic lateral p-n-p transistor on the integrated device and the dependence of this influence on the distance between the main transistor and the internal diode. Finally, the optimized design of the above-mentioned distance was proposed. These provide a theoretical basis for understanding the issue and devising new methods to isolate the main transistor and the internal diode.
关键词:
通讯作者信息:
电子邮件地址:
来源 :
Journal of Beijing University of Technology
ISSN: 0254-0037
年份: 2009
期: 9
卷: 35
页码: 1168-1174
归属院系: