Herein,　a　quantum　dot　random　laser　was　achieved　using　a　silicon　nanowire　array.　The　silicon　nanowire　array　was　grown　by　a　metal-assisted　chemical　etching　method.　A　colloidal　quantum　dot　solution　was　spin-coated　on　silicon　nanowires　to　form　the　random　laser.　The　performance　of　the　random　laser　was　controlled　by　the　resistivity　of　silicon　wafers　and　the　length　of　silicon　nanowires.　A　transition　from　incoherent　random　lasing　to　coherent　random　lasing　was　obtained　by　increasing　the　resistivity　of　the　silicon　wafers.　The　random　lasing　threshold　increased　with　an　increase　in　the　length　of　the　silicon　nanowires.　These　results　may　be　useful　to　explore　high-performance　silicon-based　random　lasers.