High-temperature characteristics of AlxGa1-xN/GaN Schottky diodes - Details

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Abstract：

High-temperature　characteristics　of　the　metal/AlxGa　1-xN/GaN　M/S/S　(M/S/S)　diodes　have　been　studied　with　current-voltage　(I-V)　and　capacitance-voltage　(C-V)　measurements　at　high　temperatures.　Due　to　the　presence　of　the　piezoelectric　polarization　field　and　a　quantum　well　at　the　AlxGa1-xN/GaN　interface,　the　AlxGa　1-xN/GaN　diodes　show　properties　distinctly　different　from　those　of　the　AlxGa1-xN　diodes.　For　the　AlxGa　1-xN/GaN　diodes,　an　increase　in　temperature　accompanies　an　increase　in　barrier　height　and　a　decrease　in　ideality　factor,　while　the　Al　xGa1-xN　diodes　are　opposite.　Furthermore,　at　room　temperature,　both　reverse　leakage　current　and　reverse　breakdown　voltage　are　superior　for　the　AlxGa1-xN/GaN　diodes　to　those　for　the　AlxGa1-xN　diodes.　©　2009　Chinese　Institute　of　Electronics.

Keyword：

Gallium nitride Schottky barrier diodes Aluminum Gallium alloys Diodes

Author Community：

[ 1 ] [Zhang, Xiaoling]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Li, Fei]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Lü, Changzhi]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Xie, Xuesong]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Li, Ying]Department of Mechanical and Electrical Engineering, Shougang Institute of Technology, Beijing 100041, China
[ 6 ] [Mohammad, S.N.]Department of Electrical and Computer Engineering, Howard University, Washington, DC 20059, United States