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作者:

Sun, Mei (Sun, Mei.) | Xu, De-gang (Xu, De-gang.) | Yao, Jian-quan (Yao, Jian-quan.)

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EI Scopus

摘要:

The golden films with various subwavelength hole arrays on the film surface are designed and fabricated on glass substrate by electron beam lithograply (EBL), focused ion beam (FIB), and reactive ion etching (RIE), respectively. The influences of the hole array symmetry and the hole shape on the light-enhanced transmission through the films are observed and simulated. The experimental results show that when the array lattice constant and the hole diameter are the same in the different array structures which are 1 μm and 350 nm respectively, the square hole arrays exhibit two transmission peaks at 1170 nm and 1580 nm with the transmissivities of 3% and 6%, respectively, while the hexagonal hole arrays exhibit an enhanced peak of 14% at 1340 nm; when the lattice constant and the duty cycle are the same for different array stucture, the transmission peaks are different for different hole shapes, which are at 763 nm with transmissivity of 12% for rectangular holes and at 703 nm with the one of 9%, respectively. The numerical simulation results by using the transfer matrix method (TMM) are consistent with the observed results. © Tianjin University of Technology and Springer-Verlag 2009.

关键词:

Ion beams Lattice constants Light transmission Numerical methods Reactive ion etching Substrates Transfer matrix method Transmissions

作者机构:

  • [ 1 ] [Sun, Mei]School of Information Engineering, Beijing University of Technology and Business, Beijing 100048, China
  • [ 2 ] [Xu, De-gang]Key Laboratory of Optoelectronics Information and Technical Science, Ministry of Education, Institute of Lasers and Optoelectronics, College of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin 300072, China
  • [ 3 ] [Yao, Jian-quan]Key Laboratory of Optoelectronics Information and Technical Science, Ministry of Education, Institute of Lasers and Optoelectronics, College of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin 300072, China

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来源 :

Optoelectronics Letters

ISSN: 1673-1905

年份: 2009

期: 4

卷: 5

页码: 317-320

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 4

ESI高被引论文在榜: 0 展开所有

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