Electron backscatter diffraction analysis of mirco-sized stress in the GaAs-AlGaAs epitaxial structure - 文章详情页

作者：

收录：

EI Scopus PKU CSCD

摘要：

The　stress　distribution　in　GaAs-AlGaAs　epitaxial　structure　was　displayed　by　electron　backscatter　diffraction　(EBSD)　technique　with　high　spacial　resolution　of　30-40　nm.　The　measuring　parameters,　including　image　quality　IQ,　Hough　peak　of　Kikuchi　patterns,　crystal　misorientations　and　local　rotations,　etc.,　were　treated　as　stress　sensitive　parameters　to　analyze　strain　states　in　periodically　epitaxial　GaAs-AlGaAs　layers.　The　micro-sized　strained　regions　were　distinguished　by　the　fast　Fourier　transform　(FFT)　and　the　intensity　calculation.

关键词：

Epitaxial growth Fast Fourier transforms Hough transforms Metallorganic chemical vapor deposition Semiconducting aluminum compounds Semiconducting gallium arsenide Semiconducting gallium compounds Stress concentration

作者机构：

[ 1 ] [Tian, Yan-Bao]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Ji, Yuan]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Wang, Jun-Zhong]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Zhang, Yin-Qi]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Guan, Bao-Lu]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Guo, Xia]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Shen, Guang-Di]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至