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作者:

Han, Jun (Han, Jun.) | Li, Jian-Jun (Li, Jian-Jun.) | Deng, Jun (Deng, Jun.) | Xing, Yan-Hui (Xing, Yan-Hui.) | Yu, Xiao-Dong (Yu, Xiao-Dong.) | Lin, Wei-Zhi (Lin, Wei-Zhi.) | Liu, Ying (Liu, Ying.) | Shen, Guang-Di (Shen, Guang-Di.)

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摘要:

We analyzed the conventional DBR which was used to increase the light extraction efficiency in AlGaInP red light LED. The coupled DBR LED with one DBR to reflect normal incidence light and one DBR to reflect inclined incidence light was grown by MOCVD. At 20 mA Dc injection current, the LED peak wavelength was 630 nm, the light intensity of on axis was 137 mcd, and the output light power was 2.32 mW. The light intensity and output light power were improved than conventional LED.

关键词:

Light emitting diodes Metallorganic chemical vapor deposition Semiconducting aluminum compounds Distributed Bragg reflectors

作者机构:

  • [ 1 ] [Han, Jun]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Li, Jian-Jun]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Deng, Jun]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Yu, Xiao-Dong]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Lin, Wei-Zhi]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Liu, Ying]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 8 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China

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来源 :

Journal of Optoelectronics Laser

ISSN: 1005-0086

年份: 2008

期: 4

卷: 19

页码: 456-458

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