Study of inductively coupled plasma etching GaP in LED fabrication - 文章详情页

作者：

Wang, Hailing (Wang, Hailing.) | Guo, Xia (Guo, Xia.) (学者：郭霞) | Zhou, Yueping (Zhou, Yueping.) | Shen, Guangdi (Shen, Guangdi.)

收录：

EI Scopus PKU CSCD

摘要：

Inductively　coupled　plasma　(ICP)　etching　rate　and　selectivity　for　GaP　are　deeply　investigated　as　a　function　of　chamber　pressure,　RF　power,　and　ICP　source　power.　Meanwhile,　the　etched　profile　and　the　surface　morphology　are　studied　in　the　process　of　the　current-blocking　layer　fabrication　and　surface-roughened　fabrication.　Finally　the　optimized　processing　parameters　are　obtained,　that　is,　the　BCl3　flow　rate　is　3/1,　the　ICP　power　is　600　W,　the　RF　power　is　100　W,　the　chamber　pressure　is　1.0　×　10-2　Pa.　In　the　process　of　surface-roughened,　only　BCl3　gas　is　used　to　improve　the　red　LED＇s　light　intensity　by　30%.

关键词：

Chlorine compounds Etching Fabrication Gallium phosphide III-V semiconductors Inductively coupled plasma Light emitting diodes Morphology Plasma etching Surface morphology

作者机构：

[ 1 ] [Wang, Hailing]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Guo, Xia]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Zhou, Yueping]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Shen, Guangdi]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

wanghailing65@emails.bjut.edu.cn

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