A　novel　AlGalnP　thin-film　light　emitting　diode　(LED)　with　an　omni　directional　reflector　structure　is　proposed　and　the　corresponding　fabrication　process　is　developed.　The　omni-directional　reflector　was　realized　by　the　combination　of　a　GaAs　epi-wafer,　SiO2　with　conductive　micro-contacts,　and　Au.　The　LED　structure　and　Si　substrate　carrier　were　then　brought　into　contact　using　silver　loaded　epoxy.　Then,　the　GaAs　substrate　was　removed　and　stopped　on　the　etching　stop　layer.　After　the　etching　stop　layer　was　removed,　a　thin　AuGeNi　electrode,　the　roughed　surface,　an　ITO　current　spreading　layer,　a　thick　AuGeNi　n-electrode,　a　AuZnAu　p-electrode,　and　alloy　were　fabricated.　The　wafer　was　cut　into　300　μm　×　300　μm　chips　and　then　packaged　into　TO-18　without　epoxy　resin.　For　20　mA　driving　current,　the　voltage　is　2.2　V,　and　light　intensity　and　light　power　respectively　reach　195mcd　and　3.78　mW,　which　is　3.6　times　higher　than　the　absorbing-substrate　LEDs.