Temperature characteristic of reflectivity of omni-directional reflector in the high brightness light-emitting diodes - 文章详情页

作者：

Song, Xinyuan (Song, Xinyuan.) | Zou, Deshu (Zou, Deshu.) | Zhang, Jianming (Zhang, Jianming.) | Liu, Sinan (Liu, Sinan.) | Shen, Guangdi (Shen, Guangdi.)

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摘要：

This　paper　researches　the　influence　of　different　anneal　temperature　to　the　reflectivity　of　the　Al/SiO2,　Al/ITO,　Au/SiO2　Au/ITO　ODR　corresponding　to　the　wavelength　of　400　nm-800　nm.　It　is　proposed　that,　in　the　wavelength　of　460　nm,　the　reflectivity　is　down　to　minimum　when　the　anneal　temperature　of　Al/SiO2　reflector　is　500-700　K,　and　when　temperature　above　700C,　it　is　back　to　normal　and　increase　a　little;　the　one　of　Al/ITO　decreases　monotonic　with　the　increasing　temperature,　and　Ti/A/Ti/Au　structure　is　applied　to　improve　the　characteristic　of　the　reflector.　Moreover,　it　is　also　noted　that,　in　the　wavelength　of　620　nm,　reflectivity　of　Au/SiO2　and　Au/ITO　both　achieve　the　maximum　with　the　anneal　temperature　of　700　K,　and　the　performance　of　Au/SiO2　ODR　is　superior　to　that　of　Au/ITO.　We　validates　the　conclusion　with　the　experiment　and　analysis　the　cause　of　the　variation　of　the　reflectivity.

关键词：

Annealing Light emitting diodes Reflection Silicon

作者机构：

[ 1 ] [Song, Xinyuan]Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zou, Deshu]Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Zhang, Jianming]Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Sinan]Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Shen, Guangdi]Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

lucy_sung@emails.bjut.edu.cn

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