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作者:

Han, Jun (Han, Jun.) | Li, Jian-Jun (Li, Jian-Jun.) | Deng, Jun (Deng, Jun.) | Xing, Yan-Hui (Xing, Yan-Hui.) | Yu, Xiao-Dong (Yu, Xiao-Dong.) | Lin, Wei-Zhi (Lin, Wei-Zhi.) | Liu, Ying (Liu, Ying.) | Shen, Guang-Di (Shen, Guang-Di.)

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摘要:

The distributed Bragg reflector (DBR) and the enhanced transmission film are analyzed, which are used to increase the light extraction efficiency in AlGaInP red light emitting diodes (LED). The LED with DBR and enhanced transmission film was grown by MOCVD. At 20 mA Dc injection current, the LED peak wave length was 623 nm, the light intensity was 200 mcd, and the output light power was 2.14 mW, The light intensity and Output light power were improved better than that of traditional LED.

关键词:

Distributed Bragg reflectors Metallorganic chemical vapor deposition Light emitting diodes

作者机构:

  • [ 1 ] [Han, Jun]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Li, Jian-Jun]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Deng, Jun]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Yu, Xiao-Dong]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Lin, Wei-Zhi]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Liu, Ying]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
  • [ 8 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China

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来源 :

Journal of Optoelectronics Laser

ISSN: 1005-0086

年份: 2008

期: 2

卷: 19

页码: 171-173

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WoS核心集被引频次: 0

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