Nano-structured surface fabrication for AlGaInP light emitting diodes - 文章详情页

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摘要：

The　self-assembled　nanostructure　metal　is　proposed　as　the　masks,　then　the　surface　of　AlGaInP　light　emitting　diodes　(LED)　is　dry-etched　to　be　roughened.　The　roughened　surfaces　increase　the　light-output.　The　light　intensity　and　light　power　of　roughened　AlGaInP　LEDs　increase　by　27%　and　12.6%　respectively　compared　with　normal　AlGaInP　LEDs.　By　optimizing　the　period　and　separation　of　metal　masks,　the　light-output　will　be　further　increased.

关键词：

Light emitting diodes Dry etching Nanostructures

作者机构：

[ 1 ] [Xu, Li-Hua]Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zou, De-Shu]Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 3 ] [Xing, Yan-Hui]Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 4 ] [Song, Xin-Yuan]Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 5 ] [Xu, Chen]Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China
[ 6 ] [Shen, Guang-Di]Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

xulihua@emails.bjut.edu.cn

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