The　reliability　of　GaN-based　high-electron　mobility　transistors　(HEMTs)　is　still　hindered　by　trapping　effects.　Current　transient　spectroscopy　provides　an　effective　way　to　characterize　traps.　In　this　paper,　we　revealed　a　trapping　behavior　hidden　in　the　recovery　transients　caused　by　the　measuring　voltage,　and　for　the　first　time,　we　took　advantage　of　it　to　demonstrate　the　I-ds-related　traps　in　these　devices.　We　applied　this　method　to　three　different　HEMTs　and　demonstrated　traps＇　energy　levels　using　Arrhenius　plots.　In　particular,　we　found　that　the　I-ds-related　traps　in　different　HEMTs　had　different　temperature　dependences.　A　perfect　exponential　relationship　between　the　degradation　rate　and　the　channel　current　in　the　linear　region　was　identified.　This　method　provides　an　effective　and　easy　way　to　localize　traps　that　capture　electrons　from　the　2-D　electron　gas　directly.