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作者:

Liu, Sinan (Liu, Sinan.) | Zou, Deshu (Zou, Deshu.) | Zhang, Jianmin (Zhang, Jianmin.) | Gu, Xiaoling (Gu, Xiaoling.) | Shen, Guangdi (Shen, Guangdi.)

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摘要:

This paper introduces a way of decreasing total reflection by roughening upper surface of an LED. The expected surface morphology is achieved by wet chemical etching. The light power and light intensity were measured. The light power is enhanced by about 29%. The effect of roughness on enhancing red LED's external quantum efficiency is demonstrated both theoretically and practically.

关键词:

Efficiency Extraction Gallium phosphide III-V semiconductors Light emitting diodes Morphology Surface morphology Wet etching

作者机构:

  • [ 1 ] [Liu, Sinan]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Zou, Deshu]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Zhang, Jianmin]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Gu, Xiaoling]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Shen, Guangdi]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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来源 :

Research and Progress of Solid State Electronics

ISSN: 1000-3819

年份: 2008

期: 2

卷: 28

页码: 245-247

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

万方被引频次:

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近30日浏览量: 2

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