Lifetime control of power fast recovery diode - 文章详情页

作者：

Xie, Shushan (Xie, Shushan.) | Hu, Dongqing (Hu, Dongqing.) | Kang, Baowei (Kang, Baowei.)

收录：

EI Scopus PKU CSCD

摘要：

Local　lifetime　control　is　obtained　by　means　of　local　platinum　doping　using　platinum　gettering　through　the　vacancy　defects　induced　by　proton　irradiation.　Assisted　by　total　lifetime　control　using　4　MeV　electron　irradiation,　a　fast　soft　recovery　power　diode　is　manufactured.　The　experiment　results　show　that　this　kind　of　diode　have　fast　reverse　recovery　time,　large　reverse　softness　and　low　reverse　leakage.　The　performance　of　such　diode　is　on　top　of　congener　products.

关键词：

Electron irradiation Platinum Proton irradiation Recovery Semiconductor diodes

作者机构：

[ 1 ] [Xie, Shushan]College of Electronic and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Hu, Dongqing]College of Electronic and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Kang, Baowei]College of Electronic and Control Engineering, Beijing University of Technology, Beijing 100022, China

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