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作者:

Moreira, Oscar Leonardo Camargo (Moreira, Oscar Leonardo Camargo.) | Cheng, Wei-Ying (Cheng, Wei-Ying.) | Fuh, Huei-Ru (Fuh, Huei-Ru.) | Chien, Wei-Chen (Chien, Wei-Chen.) | Yang, Wenjie (Yang, Wenjie.) | Fei, Haifeng (Fei, Haifeng.) | Xu, Hongjun (Xu, Hongjun.) | Zhang, Duan (Zhang, Duan.) | Chen, Yanhui (Chen, Yanhui.) | Zhao, Yanfeng (Zhao, Yanfeng.) | Lv, Yanhui (Lv, Yanhui.) | Wu, Gang (Wu, Gang.) | Lv, Chengzhai (Lv, Chengzhai.) | Arora, Sunil K. (Arora, Sunil K..) | Coileain, Cormac O. (Coileain, Cormac O..) | Heng, Chenglin (Heng, Chenglin.) | Chang, Ching-Ray (Chang, Ching-Ray.) | Wu, Han-Chun (Wu, Han-Chun.)

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EI Scopus SCIE PubMed

摘要:

SnSe2 is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe2 using first-principles calculations and verify predictions using a gas sensor made of few-layer SnSe2 grown by chemical vapor deposition. Theoretical simulations indicate that electrons transfer from SnSe2 to NO2, whereas the direction of charge transfer is the opposite for NH3. Notably, a flat molecular band appears around the Fermi energy after NO2 adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH3, NO2 molecules adsorbed on SnSe2 have a lower adsorption energy and a higher charge transfer value. The dynamic-sensing responses of SnSe2 sensors confirm the theoretical predictions. The good match between the theoretical prediction and experimental demonstration suggests that the underlying sensing mechanism is related to the charge transfer and induced flat band. Our results provide a guideline for designing high-performance gas sensors based on SnSe2.

关键词:

charge transfer first-principles calculations gas sensing NH3 gas sensor NO2 gas sensor selective gas sensing SnSe2

作者机构:

  • [ 1 ] [Moreira, Oscar Leonardo Camargo]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 2 ] [Yang, Wenjie]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 3 ] [Fei, Haifeng]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 4 ] [Xu, Hongjun]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 5 ] [Zhao, Yanfeng]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 6 ] [Lv, Yanhui]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 7 ] [Wu, Gang]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 8 ] [Lv, Chengzhai]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 9 ] [Coileain, Cormac O.]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 10 ] [Heng, Chenglin]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 11 ] [Wu, Han-Chun]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
  • [ 12 ] [Cheng, Wei-Ying]Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan
  • [ 13 ] [Chien, Wei-Chen]Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan
  • [ 14 ] [Chang, Ching-Ray]Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan
  • [ 15 ] [Chang, Ching-Ray]Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
  • [ 16 ] [Fuh, Huei-Ru]Yuan Ze Univ, Dept Chem Engn & Mat Sci, Taoyuan 320, Taiwan
  • [ 17 ] [Zhang, Duan]Capital Normal Univ, Beijing Key Lab Nanophoton & Nanostruct, Elementary Educ Coll, Beijing 100048, Peoples R China
  • [ 18 ] [Chen, Yanhui]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 19 ] [Arora, Sunil K.]Panjab Univ, Ctr Nano Sci & Nano Technol, Chandigarh 160014, India
  • [ 20 ] [Coileain, Cormac O.]Trinity Coll Dublin, CRANN, Dublin 2, Ireland
  • [ 21 ] [Coileain, Cormac O.]Trinity Coll Dublin, Adv Mat & Bioengn Res AMBER, Sch Chem, Dublin 2, Ireland

通讯作者信息:

  • [Wu, Han-Chun]Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China;;[Chang, Ching-Ray]Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan;;[Chang, Ching-Ray]Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan;;[Fuh, Huei-Ru]Yuan Ze Univ, Dept Chem Engn & Mat Sci, Taoyuan 320, Taiwan

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来源 :

ACS SENSORS

ISSN: 2379-3694

年份: 2019

期: 9

卷: 4

页码: 2546-2552

8 . 9 0 0

JCR@2022

JCR分区:1

被引次数:

WoS核心集被引频次: 75

SCOPUS被引频次: 57

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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