The　performance　of　a　new　structural　IGBT-an　internal　transparent　collector　IGBT　(ITC-IGBT)　that　is　proposed　recently　is　simulated.　On　the　foundation　of　the　traditional　non-transparent　collector　IGBT　structure,　a　local　high　recombination　region　where　the　carriers＇　lifetime　is　low　enough　is　introduced　just　below　the　collector　in　the　collector　region.　In　this　way,　a　transparent　collector　is　realized　in　this　IGBT.　Meanwhile,　the　technical　problem　of　ultra　thin　wafer　processing　during　the　manufacturing　of　low　voltage　transparent　collector　IGBTs　is　also　avoided.　We　emphasize　the　simulation　of　the　temperature　and　turn-off　characteristics　of　the　device,　and　compare　it　with　the　existing　PT-IGBT　and　FS-IGBT.　The　results　demonstrate　that　by　properly　coordinating　the　configuration　of　the　parameters,　not　only　does　the　internal　transparent　collector　IGBT　boast　a　positive　temperature　coefficient　of　saturation　voltage,　it　also　possesses　a　fast　turn-off　speed,　indicating　the　excellent　performance　of　the　transparent　collector　IGBT.