Investigation of electrical properties of InGaN:Mg films - 文章详情页

作者：

收录：

EI Scopus PKU CSCD

摘要：

The　electrical　properties　of　InGaN:Mg　films　grown　by　MOCVD　with　various　growth　temperature　and　Mg-doping　concentration　were　investigated.　The　hole　concentration　increases　with　the　In　mole　fraction.　In　spite　of　the　continuous　increase　of　Mg　incorporation,　the　hole　concentration　of　the　film　increases　at　first　and　then　decreases　from　a　certain　amount　of　Mg　incorporation.　The　high　quality　InGaN:Mg　film　with　maximum　hole　concentration　value　of　2.4　×　1019　cm-3　was　obtained　by　optimizing　these　two　growth　conditions.　The　high　hole　concentration　InGaN:Mg　films　are　important　to　further　improvements　in　device　performance.

关键词：

III-V semiconductors Metallorganic chemical vapor deposition Semiconductor doping Hole concentration X ray diffraction analysis Magnesium printing plates

作者机构：

[ 1 ] [Niu, Nanhui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wang, Huaibing]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Jianping]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xing, Yanhui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Shen, Guangdi]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

pitt@emails.bjut.edu.cn

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至