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作者:

Li, Tong (Li, Tong.) | Pei, Zhijun (Pei, Zhijun.) | Sun, Shoumei (Sun, Shoumei.) | Ma, Xingbing (Ma, Xingbing.) | Feng, Liying (Feng, Liying.) | Zhang, Ming (Zhang, Ming.) | Yan, Hui (Yan, Hui.)

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摘要:

La0.85Sr0.15MnO3 (LSMO)/TiO2 heterostructures are synthesized by RF magnetron sputtering with different LSMO thicknesses. The rectifying properties of the junctions are related to the LSMO thickness and good rectifying properties appear in the LSMO (100 nm)/TiO2 junction. Furthermore, an excellent rectifying characteristic is presented over a relatively wide temperature range for LSMO (100 nm)/TiO2 heterostructures. All samples exhibit a huge effective resistance, which plays an important role in the I-V curves as well as the rectifying properties. The diffusion potential of the heterostructures decreases as the measurement temperature increases, which is attributed to the modulation of the interface electronic structure of LSMO/TiO2 heterostructures. The metal-insulator (M-I) transition of LSMO also appears in the heterostructures and the increased sheet-resistance of heterostructures at low temperature is related to the introduction of effective resistance.

关键词:

Magnetron sputtering Metal insulator boundaries Electronic structure Strontium compounds Heterojunctions Manganese compounds Temperature Metal insulator transition Lanthanum compounds Titanium compounds Sheet metal

作者机构:

  • [ 1 ] [Li, Tong]Department of Electronics Engineering, Tianjin University of Technology and Education, Tianjin 300222, China
  • [ 2 ] [Li, Tong]Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Pei, Zhijun]Department of Electronics Engineering, Tianjin University of Technology and Education, Tianjin 300222, China
  • [ 4 ] [Sun, Shoumei]Department of Electronics Engineering, Tianjin University of Technology and Education, Tianjin 300222, China
  • [ 5 ] [Ma, Xingbing]Department of Electronics Engineering, Tianjin University of Technology and Education, Tianjin 300222, China
  • [ 6 ] [Feng, Liying]Department of Electronics Engineering, Tianjin University of Technology and Education, Tianjin 300222, China
  • [ 7 ] [Zhang, Ming]Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, China
  • [ 8 ] [Yan, Hui]Laboratory of Thin Film Materials, Beijing University of Technology, Beijing 100022, China

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来源 :

Chinese Journal of Semiconductors

ISSN: 0253-4177

年份: 2008

期: 9

卷: 29

页码: 1794-1798

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