Measurement and evaluation of micro-sized strain fields in GaN epitaxial structure - 文章详情页

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摘要：

The　elastic　strain　field　in　a　GaN/sapphire　structure　was　measured　via　electron　backscatter　diffraction　(EBSD).　Image　quality　and　small　misorientation　of　EBSD　Kikuchi　patterns　as　strain　sensitive　parameters　were　applied　to　evaluate　the　distortion　and　the　rotation　of　crystal　lattices　in　GaN-buffer-sapphire　structure,　as　well　as　to　display　micro-sized　elastic　strain　field.　The　influence　region　of　the　elastic　strain　in　GaN/sapphire　structure　is　about　200700　nm.　The　diffraction　intensities　of　Kikuchi　patterns　were　extracted　and　the　strained/unstrained　regions　in　GaN　epitaxial　structure　were　recognized　by　using　the　fast　Fourier　transform　(FFT).

关键词：

III-V semiconductors Crystal structure Fast Fourier transforms Electron diffraction Backscattering Quality control Sapphire Gallium nitride

作者机构：

[ 1 ] [Wang, Jun-Zhong]Institute of Microstructure and Property of Advanced Materials, Beijing 100124, China
[ 2 ] [Ji, Yuan]Institute of Microstructure and Property of Advanced Materials, Beijing 100124, China
[ 3 ] [Tian, Yan-Bao]Institute of Microstructure and Property of Advanced Materials, Beijing 100124, China
[ 4 ] [Niu, Nan-Hui]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Xu, Chen]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Han, Jun]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Guo, Xia]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Shen, Guang-Di]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

Simon.wang@oichina.cn

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