MOCVD growth two active regions AlGaInP LED - 文章详情页

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摘要：

The　AlGaInP　LED　with　two　active　regions　was　designed　and　grown　by　MOCVD.　Two　AlGalnP　active　regions　were　connected　by　a　heavily　doping　reversed-biased　tunnel　junction.　At　20　mA　injection　current,　the　LED　main　wavelength　is　623nm,　peak　wave　length　is　633　nm,　the　forward　voltage　is　4.16　V,　and　the　output　light　intensity　is　163　mcd.

关键词：

Semiconducting gallium compounds Semiconductor growth Semiconducting aluminum compounds Semiconducting indium compounds Metallorganic chemical vapor deposition Doping (additives) Tunnel junctions Light emitting diodes

作者机构：

[ 1 ] [Han, Jun]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Li, Jian-Jun]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Deng, Jun]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Yu, Xiao-Dong]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Lin, Wei-Zhi]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Liu, Ying]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Lab., School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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电子邮件地址：

hanjun@bjut.edu.cn

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