BN　thin　film　was　prepared　by　RF　sputtering　on　n-Si　(100)　wafer.　We　used　ion　implantation　technique　to　introduce　Be+　into　BN　thin　film,　and　the　film　showed　p-type　semiconductor　properties.　We　firstly　used　Van　der　Pauw　method　to　measure　the　Hall　Effect　of　the　doped　film　at　room　temperature,　and　the　film　showed　p-type　conductivity　which　resistivity　was　around　10-3Ω·cm,　mobility　was　14-28　cm2/V·S,　carrier　concentration　was　1019-1020　cm-3　and　Hall　coefficient　was　about　10-1　cm3/C.　The　p-BN/n-Si　heterojunction　showed　obvious　rectifier　characteristics.