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作者:

Wang, Xiaodong (Wang, Xiaodong.) | Ji, Yuan (Ji, Yuan.) | Zhong, Taoxing (Zhong, Taoxing.) | Li, Zhiguo (Li, Zhiguo.) | Xia, Yang (Xia, Yang.) | Liu, Danmin (Liu, Danmin.) (学者:刘丹敏) | Xiao, Weiqiang (Xiao, Weiqiang.)

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摘要:

Texture and grain boundary character distribution of Cu interconnects with different line width for as-deposited and annealed conditions were measured by EBSD. All specimens appear mixed texture and (111) texture is the dominate component. As-deposited interconnects undergo the phenomenon of self-annealing at RT, in which some abnormally large grains are found. Lower aspect ratio of lines and anneal treatment procured larger grains and stronger (111) texture. Meanwhile, the intensity proportion of other textures with lower strain energy to (111) texture is decreased. As-deposited specimens reveal (111) and (111) components. (111) component appeared and (111) and (111) components were developed during the annealing process. High angle boundaries are dominant in all specimens, boundaries with a misorientation of 55-60 and ∑3 ones in higher proportion, followed by lower boundaries with a mi-sorientation of 35-40 and ∑9 boundaries. As the aspect ratio of lines and anneal treatment increase, there is a gradual increment in ∑3 boundaries and a decrease in ∑9 boundaries.

关键词:

Strain energy Annealing Aspect ratio Integrated circuit interconnects Grain boundaries Textures Copper

作者机构:

  • [ 1 ] [Wang, Xiaodong]Basic Department, Chinese People's Armed Police Forces Academy, Langfang 065000, China
  • [ 2 ] [Ji, Yuan]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Zhong, Taoxing]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Li, Zhiguo]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Xia, Yang]Microelectronics R and D Center, Chinese Academy of Sciences, Beijing 100029, China
  • [ 6 ] [Liu, Danmin]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China
  • [ 7 ] [Xiao, Weiqiang]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100022, China

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来源 :

Chinese Journal of Semiconductors

ISSN: 0253-4177

年份: 2008

期: 6

卷: 29

页码: 1136-1140

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