A　quantum　mechanical　model　for　simulation　of　electron　transport　in　QWIPs　was　established　with　transfer　matrix　method　(TMM),　in　order　to　identify　the　parameters　such　as　the　well　width,　height　of　the　barrier,　etc.　The　GaAs/AlGaAs　were　grown　on　the　semi-insulating　GaAs　substrate　by　molecular　beam　epitaxy　(MBE).　The　device　was　measured　by　FTIR.　The　experiment　results　showed　a　good　agreement　with　calculations.