Oxygen partial pressure modulation effect on the ferromagnetism of Zn1-xCoxO1-δ magnetic semiconductor - 文章详情页

作者：

Ji, Gang (Ji, Gang.) | Zhang, Yunpeng (Zhang, Yunpeng.) | Yan, Shishen (Yan, Shishen.) | Mei, Liangmo (Mei, Liangmo.) | Zhang, Ze (Zhang, Ze.)

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EI Scopus PKU CSCD

摘要：

The　microstructure　of　the　room　temperature　ferromagnetic　semiconductor　Zn1-xCox-O1-δ　was　investigated　by　analytical　electron　microscopy.　The　experimental　results　indicated　that　the　oxygen　content　decided　the　microstructure　and　the　magnetic　property　of　Zn1-xCoxO1-δ.　The　films　deposited　under　poor　oxygen　consist　of　5　nm　sized　wurtzite　Zn1-xCoxO1-δ　and　amorphous　Zn-Co-O　between　them,　of　which　both　are　ferromagnetic　phases.　The　films　deposited　under　rich　oxygen　consist　of　10-20　nm　Zn1-xCoxO1-δ　and　antiferromagnetic　phase　CoO,　the　concentration　of　the　oxygen　vacancy　in　wurtzite　is　greatly　reduced,　and　the　room　temperature　ferromagnetism　is　greatly　weakened　and　even　disappeared.

关键词：

Cobalt compounds Ferromagnetic materials Ferromagnetism Magnetic semiconductors Modulation Oxygen Oxygen vacancies Partial pressure Semiconducting zinc compounds Zinc sulfide

作者机构：

[ 1 ] [Ji, Gang]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Zhang, Yunpeng]School of Physics, Shandong University, Jinan 250100, China
[ 3 ] [Yan, Shishen]School of Physics, Shandong University, Jinan 250100, China
[ 4 ] [Mei, Liangmo]School of Physics, Shandong University, Jinan 250100, China
[ 5 ] [Zhang, Ze]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

jigang@bjut.edu.cn

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