• Complex
  • Title
  • Keyword
  • Abstract
  • Scholars
  • Journal
  • ISSN
  • Conference
搜索

Author:

Luo, Dan (Luo, Dan.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Guo, Wei-Ling (Guo, Wei-Ling.) | Shu, Xiong-Wen (Shu, Xiong-Wen.) | Tian, Zeng-Xia (Tian, Zeng-Xia.) | Shen, Guang-Di (Shen, Guang-Di.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

The paper reports that the lasing wavelength of the LD changes markedly with the width of the active region. The lasing wavelengths of the LDs emitting at 960 nm, which have the same epitaxial growth and different width of active region, are investigated. It is found that the lasing wavelength of the device is becoming short as the stripe width is getting narrow. Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spectrum of GaAs material, and that is the result of narrowing the width of the active region. Therefore, the lasing wavelength can be easily modified by changing the stripe width of LDs in practice.

Keyword:

Carrier concentration Optical gain Wavelength Epitaxial growth Threshold current density Semiconducting gallium arsenide Semiconductor lasers

Author Community:

  • [ 1 ] [Luo, Dan]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Xu, Chen]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Guo, Wei-Ling]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Shu, Xiong-Wen]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Tian, Zeng-Xia]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 6 ] [Shen, Guang-Di]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address:

Show more details

Related Keywords:

Related Article:

Source :

Journal of Optoelectronics Laser

ISSN: 1005-0086

Year: 2007

Issue: 9

Volume: 18

Page: 1033-1035

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

Affiliated Colleges:

Online/Total:417/5439544
Address:BJUT Library(100 Pingleyuan,Chaoyang District,Beijing 100124, China Post Code:100124) Contact Us:010-67392185
Copyright:BJUT Library Technical Support:Beijing Aegean Software Co., Ltd.