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The paper reports that the lasing wavelength of the LD changes markedly with the width of the active region. The lasing wavelengths of the LDs emitting at 960 nm, which have the same epitaxial growth and different width of active region, are investigated. It is found that the lasing wavelength of the device is becoming short as the stripe width is getting narrow. Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spectrum of GaAs material, and that is the result of narrowing the width of the active region. Therefore, the lasing wavelength can be easily modified by changing the stripe width of LDs in practice.
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Journal of Optoelectronics Laser
ISSN: 1005-0086
Year: 2007
Issue: 9
Volume: 18
Page: 1033-1035
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