The　photo-excitation　coefficient,　electron　recombination　coefficient　and　bulk　photovoltaic　coefficient　of　Cu　in　LiNbO3　are　obtained.　The　effects　of　doped　composition　ratio　of　the　deeper　and　shallower　trap　centers,　oxidization-reduction　state　on　the　recording　sensitivity　and　dynamic　range　are　simulated　numerically.　The　crystal　conditions　for　simultaneously　optimizing　sensitivity　and　dynamic　range　are　also　investigated.　The　results　show　that,　it　is　available　to　choose　doping　concentration　of　shallower　trap　centers　as　5.0　×　1025　m-3　and　doping　concentration　of　deeper　trap　centers　as　3　×　1024-3　×　1025　m-3　to　achieving　the　larger　sensitivity　and　dynamic　range　simultaneously　in　the　practical　applications.