A　high　efficient　AlGaInP　thin-film　light　emitting　diode　(LED)　with　transparent　conducting　indium　tin　oxide　(ITO)　p-type　ohmic　contacts　and　with　a　high　reflectivity　metal　reflector　structure　was　proposed.　ITO　layers　are　also　used　as　window　material　and　spreading　layers　of　current　on　AlGaInP　LED.　The　AlGaInP　LED　epitaxial　layers　with　metal　reflector　is　inverted　to　bond　to　the　GaAs　submount　by　using　80　Au-20　Sn(wt%)　alloy　as　a　solder　(RS-LED).　The　optical　and　electrical　characteristics　of　the　new　structure　LED(RS-LED)　are　presented　and　compared　with　conventional　AlGaInP　absorbing　substrates　AS-LED　and　AS-LED　with　DBR　Great　improvements　in　output　power　and　luminous　intensity　were　observed.　It　is　shown　that　the　output　power　from　the　RS-LED　at　forward　current　20　mA　is　2.4　and　1.7　times　higher　than　that　of　AS-LED　and　DBR-AS-LED　respectively.　179.6　mcd　luminous　intensity　from　the　RS-LED　(@20　mA,　peak　wavelength　624　nm)　could　be　obtained　under　20　mA　injection,　which　is　2.15　and　1.28　times　higher　luminous　intensity　than　that　of　AS-LED　(@20　mA,　peak　wavelength　627　nm)　and　DBR-AS-LED　(@20　mA,　peak　wavelength　623　nm)　respectively.