Current expansion of high-power diode laser bars - 文章详情页

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摘要：

980　nm　GaAs/AlGaAs　separate　confinement　hetero-structure　single　quantum　well　laser　bars　were　grown　by　metal　organic　chemical　vapor　deposition.　The　relationships　between　the　etching　depth　and　the　bars＇　parameters　have　been　studied.　When　the　bar　is　not　etched　deep　to　the　active　layer,　the　output　power　and　the　slope　efficiency　are　in　direct　proportion　to　the　etching　depth,　while　the　threshold　current　are　in　inverse　proportion　to　the　etching　depth.　When　the　bar　is　etched　deeper　than　the　active　layer,　the　output　power　and　the　slope　efficiency　become　lower　and　the　threshold　current　become　higher.　The　best　etching　depth　is　1.993　nm　in　the　experiment,　which　is　less　than　the　depth　of　the　active　layer.

关键词：

High power lasers Etching Semiconductor lasers Metallorganic chemical vapor deposition Quantum well lasers Semiconductor quantum wells

作者机构：

[ 1 ] [Zhang, Nan]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Cui, Bi-Feng]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Bin]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Zou, De-Shu]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Li, Jian-Jun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Gao, Guo]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Zhang, Lei]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Wang, Zhi-Qun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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