High brightness AlGaInP LED with coupled distributed Bragg reflector - 文章详情页

作者：

收录：

EI Scopus PKU CSCD

摘要：

An　Al0.6Ga0.4As/AlAs　distributed　Bragg　reflector　(DBR)　for　a　630　nm　peak　wavelength　high　brightness　AlGaInP　LED　is　studied.　The　reflective　characteristics　of　normal　DBR　and　coupled　DBR　are　simulated　using　the　interference　matrix　model.　The　simulated　DBR　structures　and　corresponding　LEDs　are　grown　by　LP-MOCVD.　The　simulated　and　experimental　results　both　indicate　that　the　coupled　DBR　can　remarkably　increase　the　light　extraction　efficiency　of　an　AlGaInP　LED.　The　non-encapsulated　LED　with　the　coupled　DBR　performs　well,　with　2.3　mW　output　optical　power,　12　lm/W　luminous　efficiency,　and　5.6%　external　quantum　efficiency,　with　an　improvement　of　35%　over　that　with　a　normal　DBR.

关键词：

Light emitting diodes Metallorganic chemical vapor deposition Quantum efficiency Distributed Bragg reflectors

作者机构：

[ 1 ] [Yu, Xiaodong]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Han, Jun]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Li, Jianjun]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Deng, Jun]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Lin, Weizhi]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Da, Xiaoli]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Chen, Yixin]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Shen, Guangdi]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

paulmartin@emails.bjut.edu.cn

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至