The　phenomenon　of　indium　migration　which　usually　happens　in　the　sintering　process　of　808　nm　laser　diodes　(LDs)　was　investigated.　To　solve　the　problem,　the　structure　of　sidewall　oxidation　is　adopted　according　to　the　conditions　of　our　lab.　Two　structural　LDs　sidewall　non-oxidation　and　sidewall　oxidation　were　manufactured,　respectively.　After　sintering　and　testing,　it　is　found　that　the　yield　of　sidewall　oxidation　LDs　reaches　95%,　which　is　20%　greater　than　that　of　sidewall　non-oxidation.　By　aging　the　two　structural　single　LDs　with　the　direct　current　of　500　mA,　it＇s　found　that　the　lifetime　of　sidewall　oxidation　diodes　is　obviously　longer　than　that　of　sidewall　non-oxidation　diodes.