InGaN/GaN　multiple　quantum　wells　have　been　grown　by　metal-organic　chemical　vapor　deposition.　InGaN/GaN　mulitiple　quantum　well　with　and　without　indium　doped　GaN　barriers　were　study.　The　results　show　the　sample　with　In-doped　GaN　barrier　had　a　poor　interface,　but　the　photoluminescence　spectrum　showed　clearly　increased　peak　intensity　and　integral　intensity,　enhanced　IBL/IYLratio　and　reduced　surface　roughness.　Electroluminescence　of　light　emitting　diodes　with　In-doped　GaN　barrier　had　better　relative　intensity　and　wavelength　uniformity.　We　presume　that　the　introduction　of　indium　is　the　dominant　factor　leading　to　the　decrease　of　the　lattice　mismatch　strain　between　well　and　barrier,　decrease　of　piezoelectricity　and　improvement　in　radiative　recombination　efficiency.