Multi-finger power SiGe HBT with non-uniform finger spacing - 文章详情页

作者：

Jin, Dongyue (Jin, Dongyue.) | Zhang, Wanrong (Zhang, Wanrong.) | Shen, Pei (Shen, Pei.) | Xie, Hongyun (Xie, Hongyun.) | Wang, Yang (Wang, Yang.)

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摘要：

A　multi-finger　power　SiGe　heterojunction　bipolar　transistor　(HBT)　with　non-uniform　finger　spacing　was　fabricated　to　improve　thermal　stability.　Experimental　results　show　that　the　peak　temperature　is　reduced　by　22　K　compared　with　that　of　an　HBT　with　uniform　finger　spacing　in　the　same　operating　conditions.　The　temperature　profile　across　the　device　can　be　improved　at　different　biases　for　the　same　HBT　with　non-uniform　finger　spacing.　Because　of　the　decrease　in　peak　temperature　and　the　improvement　of　temperature　profile,　the　power　SiGe　HBT　with　non-uniform　spacing　can　operate　at　higher　bias　and　hence　has　higher　power　handling　capability.

关键词：

Heterojunction bipolar transistors Scanning electron microscopy Semiconducting germanium compounds Semiconducting silicon compounds Thermodynamic stability

作者机构：

[ 1 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Shen, Pei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Xie, Hongyun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Wang, Yang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

jindongyue@sohu.com

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