Buried-metal self-aligned process for SiGe HBT - 文章详情页

作者：

Chen, Jian-Xin (Chen, Jian-Xin.) | Wu, Nan (Wu, Nan.) | Shi, Chen (Shi, Chen.) | Yang, Wei-Ming (Yang, Wei-Ming.)

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摘要：

Aiming　at　improving　accuracy　of　photoetching　technology　in　conventional　double-mesa　process　for　SiGe　heterojunction　bipolar　transistor　(HBT),　this　paper　introduced　buried-metal　layers　and　developed　silicon　based　buried-metal　self-aligned　process　in　order　to　increase　the　mesa　area　utilization　efficiency.　Novel　process　has　advantages　of　smaller　junction　area,　larger　metal-semiconductor　contact　area　and　fewer　pinhole　fabrication　defects,　with　no　increase　of　fabrication　difficulties　or　advancement　of　photolithography　equipment.

关键词：

Alignment Defects Equipment Fabrication Heterojunction bipolar transistors Photolithography Semiconductor junctions Semiconductor metal boundaries Silicon alloys

作者机构：

[ 1 ] [Chen, Jian-Xin]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wu, Nan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Shi, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Yang, Wei-Ming]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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