Investigation of different doping methods to the p-type GaN - 文章详情页

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Uniformity-doping,　δ-doping　and　growth-interruption-doping　GaN:Mg　has　been　investigated　by　metal-organic　chemical　vapor　deposition.　It　was　demonstrated　through　electrical,　optical,　and　surface　studies　that　the　film　of　growth-interruption-Mg-doping　have　better　crystal　quality　than　others　two,　this　doping　method　increase　self-compensation　because　of　the　incorporation　of　additional　impurities　during　the　interruption　period.　Mg-δ-do-ping　significantly　enhance　hole　concentration　leading　to　reduced　p-type　resistivity,　enhanced　hole　mobility,　also　obtain　smooth　surface　morphology.

关键词：

Atomic force microscopy Doping (additives) Electric properties Gallium nitride Hole concentration Hole mobility Metallorganic chemical vapor deposition Optical properties Surface morphology Surface properties

作者机构：

[ 1 ] [Xing, Yan-Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Han, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Deng, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Jian-Ping]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Niu, Nan-Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Li, Tong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Shen, Guang-Di]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

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