Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD - 文章详情页

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摘要：

InGaN/GaN　MQWs　structures　were　grown　by　MOCVD.　The　effects　of　the　growth　interruption　time　on　the　optical　and　structural　properties　of　InGaN/GaN　MQWs　were　investigated.　The　growth　interruption　can　improve　the　interface　quality,　increase　the　intensity　of　photoluminescence　(PL)　and　electroluminescence　(EL);　but　if　the　interruption　time　was　too　long,　the　well　thickness　and　the　average　in　composition　of　MQWs　decreased,　and　the　EL　intensity　also　decreased　due　to　poor　interface　quality　and　impurity　derived　by　growth　interruption.

关键词：

Photoluminescence Metallorganic chemical vapor deposition X ray diffraction analysis Structural properties Optical properties Semiconductor quantum wells Electroluminescence Growth (materials) Gallium nitride

作者机构：

[ 1 ] [Niu, Nan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wang, Huai-Bing]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Jian-Ping]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Nai-Xin]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China

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pitt@emails.bjut.edu.cn

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